SK Hynix Accelerates 1c DRAM Production, Set to Overtake 1b Next Quarter

SK Hynix is speeding up the share of 10-nanometer-class sixth-generation 1c DRAM in production, according to a September 7 report by Chosun Ilbo. According to ChainCatcher, industry data show the company’s 1c DRAM share rose from about 10% in the first quarter to about 13% in the second quarter this year, with expectations of about 24% in the third quarter, about 34% in the fourth quarter, and about 35% in the first quarter next year, when it could surpass 1b DRAM and become the main process. The report said 1b DRAM, the 10-nanometer-class fifth generation, peaked at about 43% in the second quarter this year before starting to decline. At the end of the second quarter, Samsung Electronics’ 1c share was about 16% and Micron’s was about 19%, both above SK Hynix’s about 13%. SK Hynix said on its second-quarter earnings call that supply of DRAM using the 1c process began in earnest from the second quarter, and that second-half growth should accelerate as HBM4 volume increases and shipments of 1c general-purpose DRAM rise. Samsung Electronics has adopted 1c DRAM for HBM4, with operating speed of about 11.7Gbps, while SK Hynix said it will first use 1c DRAM as the core chip for next-generation HBM4E. Counterpoint Research and others estimated that this year’s HBM4 market share, based on combined demand from Nvidia, Google, and AMD, will be in the mid-50% range for SK Hynix, the high-20% range for Samsung Electronics, and the high-10% range for Micron.